Intellectual Property Analyst

Posted on: 2007-07-13

DURGALAKSHMI DORAISWAMI  14838 SW Citrine Loop, Beaverton OR 503-524-7581: [email protected] SUMMARY Committed, resourceful, energizing and innovative individual well versed in semiconductors, materials science technolgoy, intellectual property (IP) law and practice. Strong experimental, analytical, and communication skills. Works well independently and in team environment. CORE COMPETENCIES • Semiconductor processing, device physics and processing equipment knowledge • Materials science fundamentals, metal/alloy chemistry, fuel cell technology, ceramics. • IP analysis, patent prosecution (OAR, RCE, CPA), offensive/defensive reviews • Financial analysis, technical analysis, and market research • Six sigma greenbelt trained OBJECTIVE To obtain research associate/analyst, technical consultant position leveraging my technical, analytical, and legal skills. PROFESSIONAL EXPERIENCE General Electric, Bangalore, India 2004 - 2006 Analyst (Technology & Intellectual Property) • Perfomred market research, financial analyses, portfolio evaluation of key competitors in specific technologies • Prepared competitive landscapes and company profiles to evaluate key players in terms of technology edge, IP portfolio • Identified critical joint ventures, collaborations, patent licensing activity of various companies. • Proactively identified IP gaps and opportunities, technology differentiators, constantly interacting with project leaders, technologists and attorneys. • Conducted prior art searches for patentability/enforcement issues of disclosures/patents • Performed non-infringement and invalidation analyses, patent novelty assessment, provided continued support to attorneys for rendering opinions during litigations• Trained in US Patent Law by attorneys at GE in USC, MPEP, CFR Portland State University (Research Associate) 2003 • Designed and developed a realistic theoretical model to simulate carbon nanotube transistors. Fabricated nanotubes, generated device characteristics to verify the model. • Designed, simulated and verified a 64-bit parallel and serial descrambler (LFSR) for the physical coding sublayer receiver block. Developed algorithmic VHDL model of a calculator. Cermet Incorporated, Atlanta, GA 2002 Research Engineer • Designed experiments to develop freestanding nitride epitaxial substrates by Physical Vapor Transport. • Employed DOE to optimize ZnO thin film deposition on Si, ZnO, and GaAs substrates (200mm MOCVD reactor, SM Inc.) to meet customer specifications. Characterized the as-deposited films using XRD, Ellipsometry, PL and Hall measurements. • Actively involved in the research and development of n and p-doped ZnO single crystals. • Submitted proposal to SBIR/STTR on, “Development of III-Nitride MBE Technology for Optoelectronic/ High Frequency Electronic Applications”. The proposal generated funds worth $1M for further research. Materials Engineering Associates, Lanham, MD 11/01-1/02 Materials Intern • Characterized fatigue behavior of carbon and other alloy steels under severe conditions including cryogenic atmospheres and 4000 psi of hydrogen using FCGR (Fatigue Crack Growth Rate) and Impact Tests. Boeing America sponsored the project. University of Maryland, College Park, MD 1999-2001 Graduate Research Fellow/Assistant • Studied the effect of grain size and phase stability on ambient temperature creep behavior of - titanium alloys. Performed microstructure evaluation to detect the presence of defects including dislocations and twins using scanning, atomic force and transmission electron microscopy. Formulated a theoretical model for creep behavior in -lattice based on the time-dependent strain variation data obtained during tensile and creep testing.DURGALAKSHMI DORAISWAMI  14838 SW Citrine Loop, Beaverton OR 503-524-7581: [email protected] SUMMARY Course Projects • Assisted in the design and fabrication of a purgeable gas cell to integrate the Fourier Transform Infrared Spectrometer with the ULVAC W-CVD reactor. • Simulated CMOS circuits incorporating time delays as well as no race condition, using SPICE. Indian Institute of Technology, Madras, India 1995-1999 Undergraduate • Generated cold solid-state diffusion bond between copper and steel powder metallurgical preforms using closed die extrusion technique. Characterized the bond formed using compression testing and microscopy. • EDUCATION University of Maryland College Park, College Park, MD 1999-2001 Master of Science in Materials Science & Engineering GPA: 3.9/4.0 Indian Institute of Technology, Madras, India 1995-1999 Bachelor of Technology in Metallurgical Engineering GPA: 8.6/10.0 PUBLICATIONS • Ankem, S., Doraiswamy, D., “Recent Developments on Ambient Temperature Deformation Behavior of Titanium Alloys”, LiMat Conference, Pusan, Korea, May 2001. • Doraiswamy, D., “Modes of Deformation in Ambient Temperature Creep in Beta Titanium Alloys”, 2001 TMS Annual Meeting, New Orleans, LA, Conference Presentation, Feb 2001. • D. Durgalakshmi, B. Vamsi Krishna, P. Venugopal, etal., “Studies on Cold Solid State Joining of Dissimilar Powder Metallurgical Preforms”, Journal of Material Processing Technology, Elsevier Publishers, Accepted. HONORS AND AWARDS • Completed training for Green Belt Certification at GE • Completed training for “Assertiveness for Work Effectiveness” program offered at GE • Recipient of the Glenn L. Martin Fellowship for graduate studies at University of Maryland in 1999- 2000. • Placed in the top 1% among the 150,000 students who appeared for the Joint Entrance Examination to IIT. • Placed in the top 0.1% in the All India Senior Secondary Certificate Examination in India. • Coordinator of the cultural event “Saarang” at Indian Institute of Technology, Madras, India. 