graduate research assistant

Posted on: 2007-01-09

Tabassom Tadayyon Laboratory for Physical Sciences Phone(W): 301-935-3153 8050 Greenmead Drive, Phone(H): 410-309-0325 College Park, MD 20742 e-mail: [email protected] Citizenship: U.S. Citizen Education: University of Maryland, College Park, MD Nov. 2006 Ph.D. - Materials Science and Engineering Iran University of Science and Technology, Tehran, Iran Jul. 1996 M.S. and B.S. - Materials Science and Engineering Professional Experience: Laboratory for Physical Science, College Park, MD Aug. 2002 – Present Graduate Student Researcher - Materials Science and Engineering • Conducted research on thin film growth with Molecular Beam Epitaxy (MBE) on GaAs substrate, focused on the dependence of the film structure on growth conditions using Atomic Force Microscopy (AFM). • Characterization of the substrate and the thin film structure using Atomic Force Microscopy (AFM). • Carried out patterning of Silicon and GaAs substrates using standard cleanroom device processing techniques such as photolithography and Reactive Ion Etching (RIE). • Numerical Simulation for structural evolution of semiconductors substrate during growth with physically based models. University of Maryland, College Park, MD May 2002 – Aug. 2002 Graduate Research Assistant II - Materials Science and Engineering • Experimental research on composition of hydroxyapatite and polyethylene for new bio-ceramic material. • Mentored undergraduate students for their science project. Materials and Energy Research Center, Tehran, Iran (MERC) Jan. 1993 – Apr. 1996 Graduate Research Assistant II - Materials Science and Engineering • Development of formulation of TiO2 compounds suitable for various industrial applications. Mina Glass Factory, Tehran, Iran May 1992 – Aug. 1992 Summer Internship • Daily operation in quality control laboratory. • Monitoring daily operation of the production line. Specialized Skills: • Thin film growth techniques: More than three years experience in of III- V semiconductors thin films growth with Molecular Beam Epitaxy (MBE). • Thin film characterization techniques: Reflection High Energy Electron Diffraction, (RHEED), knowledge, and Profilometry. • Scanning probe microscopy: more than 3 years experience with Atomic Force Microscopy (AFM) and image analysis for AFM. • Materials Characterization techniques: Experience of Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), X-Ray Photoelectron Spectroscopy and X-Ray Diffraction (XRD). • More than 3 years clean room experience in photolithography, Plasma Enhanced Chemical vapor Deposition (PECVD), electron beam vapor deposition (CHA), chemical etching, reactive ion etching (RIE) and inductively coupled plasma etching (ICP). • Experienced with dilatometery, Differential Thermal Analysis (DTA), Thermal Gravimetery (TG) and Particle laser size analyzer. Publications: • T. Tadyyon-Eslami, H. C. Kan, L. C. Calhoun and R. J. Phaneuf,”Temperature-Driven Change in Growth Mode on Patterned GaAs (001): Evidence for Effect of the Preroughening Transition”, Physical Review Letters, 9 ,126101(2006). • H. C. Kan, R. Ankam, S. Shah, K. Micholsky, T. Tadayyon-Eslami, L. Calhoun and R. J. Phaneuf,”Evolution of Patterend GaAs(001) during Homoepitaxial Growth: Size vs. Spacing”, Physical Review B, 73, 195410 (2006). • H, C. Kan, S. Shah, T. Tadayyon-Eslami and R. J. Phaneuf,”Transient evolution of surface roughness on patterned GaAs(001) during homoepitaxial growth, Phys. Review Letters, 92, 146101 (2004). • S. Shah, T. Garrette, K. Limpaphayom, T. Tadayyon-Eslami, H. C. Kan and R. J. Phaneuf,”Patterning-based investigation of the length-scale dependence of the surface evolution during multilayer epitaxial growth, Applied Physics Letters, 83, 4330 (2003). Presentations at Professional Meetings: • “Temperature-Driven Change in the Unstable Growth Mode on Patterned GaAs(001)”, 66th Annual Physical Electronics Conference, Princeton, NJ, June18-21, 2006 (Nottingham Contestant). • “Temperature and Flux Dependence of Unstable Growth Mode on Patterned GaAs(001)”, 2006 American Physical Society March Meeting, Baltimore, MD, March 13-17, 2006. • “Temperature and Flux Dependence of Transient Growth Instabilities on Patterned GaAs(001)”, 65th Annual Physical Electronics Conference, Madison, WI, June 20-22, 2005. • “Evolution of Patterned Structures during Growth of GaAs Above and Below the Roughening Transition", 2004 American Physical Society March Meeting, Montreal, Canada, March 22-26, 2004. • “Preparation and Investigation of Electrical Bodies from Titanium Dioxide,” Second Iranian Ceramic Congress Oct. 1995. • “The Effect of Particle Size Distribution on Sintering Behavior Aluminum Dioxide Powders, First Iranian Ceramic Congress” Oct. 1994. Professional Associations: • Member, America Vacuum Society (AVS), 2003 – Present • Member, American Physical Society (APS), 2004 – Present